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ASFETs for Battery Isolation

Strong SOA, robustness and maximum current

The majority of today’s handheld and battery powered tools and equipment are reliant on multi-cell lithium-ion battery packs. Li-ion batteries have the advantage of high energy density. However, in a fault condition this can become problematic with the potential for a massive uncontrolled energy discharge, resulting in over-heating of loads and potential circuit fires. To handle any significant discharge in a controlled manner until the battery is safely isolated and the system switched-off, requires an extremely robust and thermally efficient MOSFET. An ideal application for Nexperia’s toughest LFPAK housed devices.    

ASFETs for Battery Isolation are designed specifically for multi-cell battery powered equipment:

  • Under a fault situation, the Battery Isolation MOSFET normally goes into linear mode due to voltages being developed across circuit inductance at high current when the fault causes a deep discharge
  • Strong SOA MOSFETs continue to operate safely and controllably until switch off and the battery is fully isolated from the load circuit
  • A low RDS(on) is required for low conduction losses in normal operation, but parameters need to be optimized for safe Battery Isolation 
  • Robust Battery Isolation MOSFETs can be used as the primary protection for equipment approval 
  • A low Vt may be required as battery protection IC may only have 2–3 V gate drive

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ASFETs for Battery Isolation
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Products

Type number Description Status Quick access
PSMN0R9-30ULD N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R0-40ULD N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R2-55SLH N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 Production
PSMN1R5-50YLH N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN2R0-55YLH N-channel 50 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN3R9-100YSF NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR90-40YLH N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMNR90-50SLH N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 Production
Visit our documentation center for all documentation

Application note (3)

File name Title Type Date
AN50006 Power MOSFETs in linear mode Application note 2022-04-01
AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03
AN90001 Designing in MOSFETs for safe and reliable gate-drive operation Application note 2017-05-05

Leaflet (2)

File name Title Type Date
nexperia_document_leaflet_LFPAK88_2022_CHN LFPAK88 将功率密度提升到新高度 Leaflet 2022-03-10
nexperia_document_leaflet_LFPAK88_2022 LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2022 Nexperia Selection Guide 2022 Selection guide 2022-01-05

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